? semiconductor components industries, llc, 1999 november, 2016 ? rev. 18 1 publication order number: bas19lt1/d bas19l, bas20l, bas21l, bas21dw5 high voltage switching diode features ? these devices are pb?free, halogen free/bfr free and are rohs compliant ? s and nsv prefixes for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable maximum ratings rating symbol value unit continuous reverse voltage bas19 bas20 bas21 v r 120 200 250 vdc repetitive peak reverse voltage bas19 bas20 bas21 v rrm 120 200 250 vdc continuous forward current i f 200 madc peak forward surge current (1/2 cycle, sine wave, 60 hz) i fsm 2 a repetitive peak forward current (pulse train: t on = 1 s, t off = 0.5 s) i frm 0.6 a junction and storage temperature range t j , t stg ?55 to +150 c power dissipation (note 1) p d 385 mw electrostatic discharge esd hm < 500 mm < 400 v v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. mounted on fr?5 board = 1.0 x 0.75 x 0.062 in. high voltage switching diode 5 cathode 1 anode marking diagrams 3 cathode 1 anode 4 cathode 3 anode sot?23 (to?236) case 318 style 8 sc?88a (sot?353) case 419a sot?23 sc?88a ordering information see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 1 2 3 1 jx m x = p, r, or s p = bas19l r = bas20l s = bas21l or bas21dw5 m = date code = pb?free package 2 3 jx m 1 3 3 2 1 4 5 *date code orientation and/or overbar may vary depending upon the manufacturing location. (note: microdot may be in either location) www. onsemi.com
bas19l, bas20l, bas21l, bas21dw5 www. onsemi.com 2 thermal characteristics (sot?23) characteristic symbol max unit total device dissipation fr?5 board (note 2) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction?to?ambient (sot?23) r ja 556 c/w total device dissipation alumina substrate (note 3) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction?to?ambient r ja 417 c/w junction and storage temperature range t j , t stg ?55 to +150 c thermal characteristics (sc?88a) characteristic symbol max unit power dissipation (note 4) p d 385 mw thermal resistance ? junction?to?ambient derate above 25 c r ja 328 3.0 c/w mw/ c maximum junction temperature t jmax 150 c operating junction and storage temperature range t j , t stg ?55 to +150 c 2. fr?5 = 1.0 0.75 0.062 in. 3. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. mounted on fr?5 board = 1.0 x 0.75 x 0.062 in. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit reverse voltage leakage current (v r = 100 vdc) bas19 (v r = 150 vdc) bas20 (v r = 200 vdc) bas21 (v r = 100 vdc, t j = 150 c) bas19 (v r = 150 vdc, t j = 150 c) bas20 (v r = 200 vdc, t j = 150 c) bas21 i r ? ? ? ? ? ? 0.1 0.1 0.1 100 100 100 adc reverse breakdown voltage (i br = 100 adc) bas19 (i br = 100 adc) bas20 (i br = 100 adc) bas21 v (br) 120 200 250 ? ? ? vdc forward voltage (i f = 100 madc) (i f = 200 madc) v f ? ? 1.0 1.25 vdc diode capacitance (v r = 0, f = 1.0 mhz) c d ? 5.0 pf reverse recovery time (i f = i r = 30 madc, i r(rec) = 3.0 madc, r l = 100) t rr ? 50 ns product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
bas19l, bas20l, bas21l, bas21dw5 www. onsemi.com 3 notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 30 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 30 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 0.1 f d.u.t. v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 3.0 ma output pulse (i f = i r = 30 ma; measured at i r(rec) = 3.0 ma) i f input signal figure 1. recovery time equivalent test circuit v f , forward voltage (v) 0.1 10 20 v r , reverse voltage (v) 1.0 0.1 0.01 0.001 50 80 110 140 170 1.6 0 v r , reverse voltage (v) 1.4 1.0 0.6 0.4 c d , diode capacitance (pf) 246 8 i f , forward current (ma) figure 2. v f vs. i f figure 3. i r vs. v r figure 4. capacitance i r , reverse current ( a) 1.0 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 85 c 55 c 150 c 125 c 25 c -55 c 200 230 0.8 1.2 1357 cap -40 c 260 150 c 125 c 85 c 55 c 25 c 30 0.001 t p , pulse on time (ms) 25 15 5 0 0.01 1 1000 figure 5. forward surge current 10 20 0.1 10 100 i fsm , forward surge max current (a) based on square wave currents t j = 25 c prior to surge
bas19l, bas20l, bas21l, bas21dw5 www. onsemi.com 4 ordering information device package shipping ? bas19lt1g sot?23 (pb?free) 3000 / tape & reel bas19lt3g sot?23 (pb?free) 10000 / tape & reel nsvbas19lt1g* sot?23 (pb?free) 3000 / tape & reel bas20lt1g sot?23 (pb?free) 3000 / tape & reel bas20lt3g sot?23 (pb?free) 10000 / tape & reel NSVBAS20LT3G* sot?23 (pb?free) 10000 / tape & reel sbas20lt1g* sot?23 (pb?free) 3000 / tape & reel bas21lt1g sot?23 (pb?free) 3000 / tape & reel sbas21lt1g* sot?23 (pb?free) 3000 / tape & reel bas21lt3g sot?23 (pb?free) 10000 / tape & reel sbas21lt3g* sot?23 (pb?free) 10000 / tape & reel bas21dw5t1g sc?88a (pb?free) 3000 / tape & reel sbas21dw5t1g* sc?88a (pb?free) 3000 / tape & reel sbas21dw5t3g* sc?88a (pb?free) 10000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *s and nsv prefixes for automotive and other applications requiring unique site and control change requirements; aec?q101 quali fied and ppap capable.
bas19l, bas20l, bas21l, bas21dw5 www. onsemi.com 5 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended style 8: pin 1. anode 2. no connection 3. cathode
bas19l, bas20l, bas21l, bas21dw5 www. onsemi.com 6 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a?01 obsolete. new standard 419a?02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ?b? sc?88a (sc?70?5/sot?353) case 419a?02 issue l mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 solder footprint on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bas19lt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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